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Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage
V GS = 0 V,
I D = 250 μ A
30
V
? BV DSS
? T J
Breakdown Voltage Temperature
Coefficient
I D = 250 μ A,Referenced to 25 ° C
26
mV/ ° C
I DSS
Zero Gate Voltage Drain Current
V DS = 24 V,
V GS = 0 V
1
μ A
V DS = 24 V, V GS = 0 V, T J = 55 ° C
10
μ A
I GSS
Gate–Body Leakage
V GS = ± 20 V,
V DS = 0 V
± 100
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = 250 μ A
0.8
2.1
3
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = 250 μ A,Referenced to 25 ° C
–4
mV/ ° C
R DS(on)
Static Drain–Source
On–Resistance
V GS = 10 V,
V GS = 4.5 V,
I D = 1.4 A
I D = 1.2 A
92
120
160
250
m ?
V GS = 10 V, I D = 1.4 A, T J = 125 ° C
114
214
I D(on)
g FS
On–State Drain Current
Forward Transconductance
V GS = 4.5V,
V DS = 5 V,
V DS = 5 V
I D = 1.4 A
3.5
4
A
S
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = 15 V,
f = 1.0 MHz
V GS = 15 mV,
V GS = 0 V,
f = 1.0 MHz
145
35
15
1.6
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = 15 V,
V GS = 10 V,
V DS = 15 V,
V GS = 4.5 V
I D = 1 A,
R GEN = 6 ?
I D = 1.4 A,
3
8
16
2
1.3
0.5
6
16
29
4
1.8
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
0.5
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
0.42
A
V SD
Drain–Source Diode Forward
V GS = 0 V,
I S = 0.42 A
(Note 2)
0.8
1.2
V
Voltage
t rr
Q rr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I F = 1.4 A,
d iF /d t = 100 A/μs
11
4
nS
nC
Notes:
1.
R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
a) 250 ° C/W when mounted on a
0.02 in 2 pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
b) 270°C/W when mounted on a
minimum pad.
2.
Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
NDS351AN Rev E(W)
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